訟案名稱 |
Bluestone Innovations Texas LLC v. OSRAM GmbH et al |
Bluestone Innovations Texas LLC v. Epistar et al |
Bluestone Innovations Texas LLC v. Epistar et al |
Bluestone Innovations Texas LLC v. OSRAM GmbH et al |
Bluestone Innovations Texas LLC v. OSRAM GmbH et al |
提告日期 |
2012年2月15日 |
2012年1月5日 |
2010年5月26日 |
2010年5月26日 |
2010年5月26日 |
原告 |
Bluestone Innovations Texas LLC |
Bluestone Innovations Texas LLC |
Bluestone Innovations Texas LLC |
Bluestone Innovations Texas LLC |
Bluestone Innovations Texas LLC |
被告 |
- OSRAM Gesellschaft mit beschrankter Haftung,
- OSRAM Opto Semiconductors GmbH & Co,
- OSRAM Sylvania Inc
- SemiLEDs Inc (旭明光電)
|
- Epistar Corporation, (晶電)
- Formosa Epitaxy Inc, (璨圓光電)
- Huga Optotech Inc, (廣鎵光電)
- Nichia Corporation,
- Nichia America Corporation,
- Showa Denko K K,
- Showa Denko America Inc,
- Tekcore Co Ltd, (泰谷光電)
- Toyoda Gosei Co Ltd,
- Toyoda Gosei North America Corporation,
- Toyoda Gosei Texas LLC
- Walsin Lihwa Corporation(華新麗華)
|
- Epistar Corporation, (晶電)
- Formosa Epitaxy Inc, (璨圓光電)
- Huga Optotech Inc, (廣鎵光電)
- Nichia Corporation,
- Nichia America Corporation,
- Showa Denko K K,
- Showa Denko America Inc,
- Tekcore Co Ltd, (泰谷光電)
- Toyoda Gosei Co Ltd,
- Toyoda Gosei North America Corporation,
- Toyoda Gosei Texas LLC
- Walsin Lihwa Corporation(華新麗華)
|
- OSRAM Gesellschaft mit beschrankter Haftung,
- OSRAM Opto Semiconductors GmbH & Co,
- OSRAM Sylvania Inc
- SemiLEDs Inc (旭明光電)
|
- OSRAM Gesellschaft mit beschrankter Haftung,
- OSRAM Opto Semiconductors GmbH & Co,
- OSRAM Sylvania Inc
- SemiLEDs Inc (旭明光電)
|
案號 |
5:12-cv-00731 |
4:12-cv-00059 |
2:2010cv00171 |
2:2010cv00172 |
5:12-cv-00731 |
訴訟法院 |
Northern District of California |
Northern District of California |
Texas Eastern District Court |
Texas Eastern District Court |
Northern District of California |
訴訟屬性 |
Intellectual Property - Patent |
Intellectual Property - Patent |
Intellectual Property - Patent |
Intellectual Property - Patent |
Intellectual Property - Patent |
系爭專利 |
US6,448,102 Method for nitride based laser diode with growth substrate removed |
US6,163,557 Fabrication of group III-V nitrides on mesas |
US6,163,557 Fabrication of group III-V nitrides on mesas |
US6,448,102 Method for nitride based laser diode with growth substrate removed |
US6,448,102 Method for nitride based laser diode with growth substrate removed |
專利移轉 |
移轉自XEROX CORPORATION |
|
移轉自XEROX CORPORATION |
移轉自XEROX CORPORATION |
移轉自XEROX CORPORATION |
爭議產品 |
OSRSM生產的LED半導體晶片模組G6SG |
|
InGaN LED磊晶片、GaN LED晶片 |
OSRSM生產的LED半導體晶片模組G6SG |
OSRSM生產的LED半導體晶片模組G6SG |
訴狀下載 |
法院移轉自[2:2010cv00172] |
法院移轉自[2:2010cv00171] |
|
|
|