2010年2月05日位於美國德州的DRAM Technologies, LLC公司，提告多家DRAM公司，直接或間接使用侵權產品進行銷售等行為，侵犯了DRAM Technologies公司四項專利(US6,324,118、US5,708,622、US5,959,925、US6,462,996)。
該四項系爭專利原皆屬於三菱電工所有，並歷經多次轉讓。
據原告訴狀指稱，被告的DRAM 晶片產品侵犯了專利權，而請求法院給予發出暫時或永久禁制令(Permanent Injunction)及禁止(Enjoining)被告後續的侵權行為，並尋求惡意侵權之損害賠償。
表一、專利訴訟案件基本資料：DRAM Technologies, LLC公司，提告多家公司侵權
| 提告日期 |
2010年2月05日 |
| 原告 |
DRAM Technologies, LLC |
被告 |
- AMERICA II GROUP, INC. d/b/a
- AMERICA II CORP.;
- AMERICA II ELECTRONICS, INC.;
- D-MAC INTERNATIONAL, INC.;
- EDX ELECTRONICS, INC.;
- ELITE SEMICONDUCTOR MEMORY
- TECHNOLOGY INC.;
- ETRON TECHNOLOGY AMERICA, INC.;
- ETRON TECHNOLOGY, INC.;
- FIDELIX CO., LTD.;
- HYNIX SEMICONDUCTOR AMERICA, INC.;
- HYNIX SEMICONDUTOR
- MANUFACTURING AMERICA, INC.;
- HYNIX SEMICONDUCTOR, INC.;
- INTEGRATED SILICON SOLUTION, INC.;
- MEMPHIS ELECTRONIC AG;
- MEMPHIS ELECTRONIC, INC.;
- ODYSSEY ELECTRONICS, LTD.;
- RAVIN ELECTRONICS LLC;
- TECH RECOVERY LLC d/b/a
- TXCESS SURPLUS;
- TRU-TRONICS, INC. d/b/a TRU-TRONICS INT'L;
- X-PRESS MICRO, INC.;
- XITRADE INC. D/B/A MEMORYDEPOT.COM
|
| 地點 |
Texas Eastern District Court |
| 案號 |
2:2010cv00045 |
系爭專利 |
6,324,118 (“the ‘118 patent”), entitled “Synchronous
semiconductor memory device having improved operational frequency margin at data input/output
5,708,622 (“the ‘622 patent”), entitled “Clock synchronous semiconductor memory device
5,959,925 (“the ‘925 patent”), entitled “DRAM incorporating self refresh control circuit and system LSI including the DRAM
6,462,996 (“the ‘996 patent”), entitled “Semiconductor integrated circuit device having internal synchronizing circuit responsive to test mode signal |
| 案由 |
專利侵權 |
| 爭議議題 |
DRAM Chip |
| 訴狀下載 |
 |
Source: 科技政策研究與資訊中心—科技產業資訊室整理，2010/02。
表二、系爭專利
| Publication |
Title |
Assignee |
Pub. Date |
Filed |
Priority |
IPC Code |
| US5708622 |
Clock synchronous semiconductor memory device |
Mitsubishi Denki Kabushiki Kaisha |
1998-01-13 |
1996-03-14 |
1993-09-13 |
G11C 7/10 |
| US5959925 |
DRAM incorporating self refresh control circuit and system LSI including the DRAM |
Mitsubishi Denki Kabushiki Kaisha |
1999-09-28 |
1998-11-03 |
1998-06-01 |
H01L 27/10 |
| US6324118 |
Synchronous semiconductor memory device having improved operational frequency margin at data input/output |
Mitsubishi Denki Kabushiki Kaisha |
2001-11-27 |
1999-03-12 |
1998-06-17 |
G11C 11/413 |
| US6462996 |
Semiconductor integrated circuit device having internal synchronizing circuit responsive to test mode signal |
Mitsubishi Denki Kabushiki Kaisha |
2002-10-08 |
2001-08-31 |
1995-06-21 |
G11C 29/30 |
(421字，表：1)
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