新聞:(2007年1月17日鉅亨網 - 奇夢達與Ovonyx今日簽署相變化記憶體技術授權協議)德國記憶體大廠奇夢達(Qimonda)與美國 Ovonyx公司今(17)日宣佈雙方達成一項長期交叉授權協議,將於獨立型記憶體產品上運用Ovonyx與奇夢達在相變化隨機存取記憶體(PCRAM) 技術方面的專利與智慧財產。根據該項協議,Ovonyx將主動支援奇夢達開發各種相變化記憶體產品的計畫。
表一、相變化記憶體發展歷史時間表 |
時間 |
事件 |
September 1966 |
Stanford Ovshinsky files first patent on phase change technology |
September 1970 |
Gordon Moore publishes research in Electronics Magazine |
June 1999 |
Ovonyx joint venture is formed to commercialize PRAM technology |
November 1999 |
Lockheed Martin works with Ovonyx on PRAM for space applications |
February 2000 |
Intel invests in Ovonyx, licenses technology |
December 2000 |
ST Microelectronics licenses PRAM technology from Ovonyx |
2001年3月 |
旺宏成立前瞻技術實驗室進行相變化記憶體開發 |
March 2002 |
Macronix files a patent application for transistor-less PRAM |
July 2003 |
Samsung begins work on PRAM technology |
2003 through 2005 |
PRAM-related patent applications filed by Toshiba, Hitachi, Macronix, Renesas, Elpida, Sony, Matsushita, Mitsubishi, Infineon and more |
2004年7月 |
台灣旺宏電子(Macronix)與IBM簽訂「合作研發相變化非揮發性記憶體」聯盟協定 |
August 2004 |
Nanochip licenses PRAM technology from Ovonyx for use in MEMS probe storage |
August 2004 |
Samsung announces successful 64Mbit PRAM array |
February 2005 |
Elpida licenses PRAM technology from Ovonyx |
September 2005 |
Samsung announces successful 256Mbit PRAM array, touts 400μA programming current |
October 2005- |
Intel increases investment in Ovonyx |
December 2005 |
Hitachi and Renesas announce 1.5 volt PRAM with 100μA programming current |
December 2005 |
Samsung licenses PRAM technology from Ovonyx |
July 2006 |
BAE Systems (formerly Lockheed Martin) introduces a Radiation Hardened C-RAM 512Kx8 chip |
September 2006 |
Samsung announces 512Mbit PRAM device |
October 2006 |
Intel and STMicroelectronics show a 128Mbit PRAM chip |
December 2006 |
IBM Research Labs demonstrate a prototype 3 by 20 nanometers[3] (旺宏、IBM與奇夢達聯合研發成果) |
2007年1月 |
奇夢達與Ovonyx簽署相變化記憶體技術授權協議 |
Source: Wikipedia, 科技政策研究與資訊中心(STPI)整理, 2007/01 |
表二、 Stanford R. Ovshinsky 1960年代相關專利 |
專利號/申請日 |
專利名稱 |
US Pat. 3588638 - Filed Mar 24, 1969 |
CURRENT CONTROLLING DEVICE INCLUDING VOZ |
US Pat. 3588639 - Filed Mar 21, 1969 |
CURRENT CONTROLLING DEVICE INCLUDING A VOZ FILM |
US Pat. 3644741- Filed May 16, 1969 |
DISPLAY SCREEN USING VARIABLE RESISTANCE MEMORY SEMICONDUCTOR |
US Pat. 3271719 - Filed Jun 21, 1961 |
RESISTANCE SWITCHES AND THE LIKE
|
US Pat. 3271584 - Filed May 28, 1962 |
RESISTANCE SWITCHES AND THE LIKE |
US Pat. 3340405 - Filed Jul 5, 1966 |
ALTERNATING CURRENT PHASE CONTROL CIRCUIT |
US Pat. 3715634 - Filed Jul 5, 1968 |
WITCH ABLE CURRENT CONTROLLING DEVICE WITH INACTIVE MATERIAL DISPERSED IN THE ACTIVE SEMICONDUCTOR MATERIAL |
US Pat. 3327302 - Filed Apr 10, 1964 |
ANALOG-TO-DIGXTAL CONVERTER EMPLOYING SEMICONDUCTOR THRESHOLD DEVICE AND DIFFERENTIATOR CIRCUIT |
US Pat. 3343034 - Filed Apr 10, 1964 |
TRANSIENT SUPPRESSOR THRESHOLD SEMICONDUCTOR DEVICE |
US Pat. 3343004 - Filed Apr 10, 1964 |
HEAT RESPONSIVE CONTROL SYSTEM |
US Pat. 3698006 - Filed May 29, 1969 |
HIGH SPEED PRINTER OF MULTIPLE COPIES FOR OUTPUT INFORMATION |
US Pat. 3528856- Filed Aug 29, 1966 |
THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURE |
US Pat. 3343085- Filed Sep 20, 1966 |
OVERVOLTAGE PROTECTION OP A.C. MEASURING DEVICES |
US Pat. 3336484 - Filed Apr 10, 1964 |
POWER SWITCHING CIRCUIT THRESHOLD SEMICONDUCTOR PEVICE |
US Pat. 3508968 - Filed May 28, 1962 |
THERMOELECTRIC DEVICE |
US Pat. 3336486 - Filed Sep 6, 1966 |
CONTROL SYSTEM HAVING MULTIPLE ELECTRODE CURRENT CONTROLLING DEVICE |
US Pat. 3395445 - Filed May 9, 1966 |
METHOD OF MAKINGSOLIDSTATE RELAY DEVICES FROM TELLURIDES |
US Pat. 3343075 - Filed Aug 15, 1966 |
MOISTURE RESPONSIVE CONTROL SYSTEM |
US Pat. 3343076 - Filed Aug 15, 1966 |
OVSHINSKY FIX F FRESSURE RESPONSIVE CONTROL SYSTEM |
US Pat. 3530441- Filed Jan 15, 1969 |
METHOD AND APPARATUS FOR STORING AND RETRIEVING INFORMATION |
Source : Google Patent, 科技政策研究與資訊中心(STPI)整理, 2007/01 |
評析:
關於相變化記憶體(Phase-change Memory, PCM)的發展歷史可參考Wikipedia的說明[1],或如下節錄:
Phase-change memory (also known as PCM, PRAM, Ovonic Unified Memory and Chalcogenide RAM [C-RAM]) is a type of non-volatile computer memory. PRAM uses the unique behavior of chalcogenide glass, which can be "switched" between two states, crystalline and amorphous, with the application of heat. PRAM is one of a number of new memory technologies that are attempting to compete in the non-volatile role with the almost universal Flash memory, which has a number of practical problems these replacements hope to address.
顧名思義,相變化記憶體是以相變化(Phase Change)原理運作的電子元件,其中相的變化主要在結晶態(crystalline)與非結晶態(amorphous)中切換,而改變此兩相的物理機制為加熱(heat)。亦即透過加熱,改變材料結構,材料結構不同,其物理行為(通常指的是電阻)也所有差異,數位訊號運作原理,”0”與”1”狀態即可判斷。
一般而言,記憶體可分為揮發性與非揮發性。一個簡單說明就是,當電源關閉後,揮發性記憶體的資料儲存狀態會消失,如常見的DRAM與SRAM。非揮發性記憶體可以在電源關閉後,仍儲存相關資料(如同硬碟HD般),常見的Flash記憶體,下世代MRAM、FeRAM與本文介紹之PCM均屬此類。
相變化記憶體發展歷史時間表如表一所示。包括1960年代Energy Conversion Devices公司[2]Stanford R. Ovshinsky相關研究工作與專利申請;1999年相變化記憶體技術授權公司Ovonyx成立,其中Ovonyx大股東包括Energy Conversion Devices公司與Intel等。後續發展包括Lockheed Martin、Intel、ST Microelectronics(意法半導體)、Samsung(三星電子)、Nanochip、Elpida(爾必達)等均與Ovonyx先後簽署授權協議,進行相關技術開發與商品化。台灣電子大廠旺宏電子(Macronix)亦於2001年3月成立前瞻技術實驗室進行相變化記憶體開發,並於2004年7月與IBM簽訂「合作研發相變化非揮發性記憶體」聯盟協定。旺宏、IBM與奇夢達在相變化記憶體的聯合開發計畫,亦有不錯的進展,可參考旺宏網站介紹[3]。需要說明,奇夢達的母公司Infineon在其他下世代記憶體開發上(例如MRAM)與IBM原本就有長時間的合作開發經驗。
關於Stanford R. Ovshinsky在1960年代的相關專利可由Google Patent搜尋,結果如表二所示。各篇專利全文影像,可上USPTO或Google Patent下載,或委託本中心進行全文列印與更進一步專利分析服務。
我們進一步調查Ovonyx專利,到2007年1月27日止,Ovonyx共有美國核准專利87篇、WIPO PCT共42筆、EPO Applications共32筆,其餘專利家族涵蓋日本、台灣、韓國、中國、澳洲與英國等。需要注意,Ovonyx在台灣、韓國與中國的布局強度高於日本與其他國家。以上Ovonyx專利列表,歡迎免費索取。關於Ovonyx專利檢索、分析與全文服務,可參考本中心說明。(2080字 ; 表2)
參考資料:
- http://en.wikipedia.org/wiki/Phase_change_memory
- http://www.ovonic.com/
- http://www.macronix.com/
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