原告： Keranos
2013年1月8日Keranos控告Analog Devices案[4:2010cv05196]，法官進行系爭專利權利項名詞解釋：US4,795,719、US4,868,629、US5,042,009。
Claim語句： aligned
解釋：placed or laid in a line
系爭專利：4,868,629
Claim語句： at least a portion of
解釋：any portion of up to and including the whole
系爭專利：5,042,009
Claim語句： drain/drain region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：4,795,719
Claim語句： drain/drain region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：5,042,009
Claim語句： drain/drain region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：4,868,629
Claim語句： effective channel length
解釋：the length of the channel under the floating gate
系爭專利：4,795,719
Claim語句： ensuring that the programming drain current for said transistor is less than a predetermined value
解釋：making certain that the drain current that flows through the floating gate transistor when hot electrons are being injected to program the transistor is less than a drain current value determined before hot electron injection programming occurs
系爭專利：5,042,009
Claim語句： EPROM array
解釋：an arrangement of nonvolatile memory cells which can be programmed and erased
系爭專利：4,868,629
Claim語句： erase gate
解釋：a gate provided in addition to and separate from the control gate, which is capable of removing charge from the floating gate
系爭專利：5,042,009
Claim語句： exposed
解釋：uncovered or unprotected by any layer or material, such as an oxide layer
系爭專利：4,795,719
Claim語句： forming a photo-resistive coating on the floating gate of each transistor
解釋：forming a photo-resistive coating in contact with the top surface of the floating gate of each transistor before forming the insulating oxide layer or second polycrystalline silicon layer for the control gate
系爭專利：4,795,719
Claim語句： forming a photoresist pattern over said substrate and over a surface of said first polycrystalline silicon
解釋：forming a photoresist pattern upon an upper or top surface of the first polycrystalline silicon and the substrate before forming the insulating oxide layer or second polycrystalline silicon layer for the control gate
系爭專利：4,795,719
Claim語句： photoresist
解釋：a light sensitive material used in semiconductor fabrication
系爭專利：4,795,719
Claim語句： photoresistive coating
解釋：a covering of photoresist material
系爭專利：4,795,719
Claim語句： photoresist pattern
解釋：the pattern that is made in a photoresist coating by removing portions of the photoresist material
系爭專利：4,795,719
Claim語句： said method further comprising raising the voltage at said erase gate
解釋：no construction necessary
系爭專利：5,042,009
Claim語句： self-aligned
解釋：the portion of the transistor channel length under the floating gate will be defined by the floating gate itself regardless of any processing misalignment thereby ensuring a constant channel length under the floating gate
系爭專利：4,795,719
Claim語句： source/source region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：5,042,009
Claim語句： source/source region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：4,795,719
Claim語句： source/source region
解釋：a doped single crystal silicon semiconductor region of a floating gate transistor
系爭專利：4,868,629
Claim語句： split gate transistor
解釋：a transistor having a control gate overlapping a floating gate such that a non-symmetrical arrangement of the control gate and floating gate are created and where the floating gate extends over only a portion of the channel
系爭專利：4,795,719
Claim語句： to expose
解釋：to leave uncovered or unprotected by any layer or material, such as an oxide layer
系爭專利：4,795,719