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• A method of fabricating a microelectronic device, comprising the steps:
• 一種製造微電子裝置方法，包含以下步驟：

furnishing a first substrate having an etchable layer, an etch-stop layer overlying 

the etchable layer, and a wafer overlying the etch-stop layer;

提供一具一可蝕刻層之第一基板，一蝕刻停止層在該可蝕刻層上，且一晶圓在該蝕刻停止層上；

forming a microelectronic circuit element in the exposed side of the wafer of the 

first substrate opposite to the side overlying the etch-stop layer;

形成一微電子元件於該第一基板的該晶圓之露出側，其對面為於在該蝕刻停止層上之側；

attaching the wafer of the first substrate to a second substrate; and

連著該第一基板的該晶圓至一第二基板；及

etching away the etchable layer of the first substrate down to the etch-stop layer.

向下蝕刻掉該第一基板的該可蝕刻層到該蝕刻停止層。